Transient Thermal States in Microwave Avalanche Diodes

Transient thermal states of microwave avalanche diodes have been investigated using the computer modelling approach. Some of the results of computations have been experimentally verified using the developed new measurement technique. Investigations have been carried out for silicon avalanche IMPATT devices having various dimensions and junction geometric structures and operating up to tens of GHz. The obtained results give a number of conclusions concerning the design, technology and operating conditions of solid-state devices. It is possible then to define the optimization conditions for the best heat removal to yield maximum power output and a reliable operation.