Title :
Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode
Author :
M. Tapajna;K. Husekova;K. Frohlich;E. Dobrocka;F. Roozeboom
Author_Institution :
Institute of Electrical Engineering, Centre of Excellence CENG, SAS, D?bravsk? cesta 9, 841 04 Bratislava, Slovakia
Abstract :
The authors have studied the leakage characteristics of Ru/HfxSi 1-xOy/Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O2. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode
Keywords :
"MOS capacitors","Hafnium","Dielectrics","Electrodes","CMOS technology","Temperature distribution","Annealing","X-ray diffraction","Reflectivity","Capacitance-voltage characteristics"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331144
