DocumentCode :
3624479
Title :
Energy Band Diagram of the Ru/Hf0.75Si0.25Oy/Si Gate Stack
Author :
K. Frohlich;J. P. Espinos;M. Tapajna;K. Husekova;R. Luptak
Author_Institution :
Institute of Electrical Engineering, Centre of Excellence CENG, SAS, D?bravsk? 9, 841 04 Bratislava, Slovak Republic. e-mail: karol.frohlich@savba.sk
fYear :
2006
Firstpage :
29
Lastpage :
32
Abstract :
The authors have studied advanced MOS structure containing Ru gate electrode, Hf0.75Si0.25Oy dielectric and Si substrate by means of capacitance-voltage characteristics (C-V), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Using experimental values we have constructed energy band diagram of the Ru/Hf0.75Si0.25/Si gate stack
Keywords :
"Dielectric substrates","Electrodes","Capacitance-voltage characteristics","MOSFET circuits","Leakage current","Optical films","Electrons","High-K gate dielectrics","Reflection","Energy loss"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331146
Filename :
4133070
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3624479
بازگشت