The Effect of Rapid Thermal Annealing on Oxygen Precipitation in Nitrogen Doped Silicon Substrate

Nitrogen introduced into a silicon substrate by the Czochralski method brought about an increase in the density of Si-SiO₂ interface traps and in the density of electrically active defects in Si by an enhanced nucleation of oxygen precipitates. Rapid thermal annealing above 800degC led to decomposition of N_xO_y clusters in the vicinity of the Si-SiO₂ interface and to an increase of the width of the denuded zone