مرکز منطقه ای اطلاع رساني علوم و فناوري - Microstructure of HfO2 and HfxSi1-xOy Dielectric Films Prepared on Si for Advanced CMOS Application

DocumentCode :

3624481

Title :

Microstructure of HfO2 and HfxSi1-xOy Dielectric Films Prepared on Si for Advanced CMOS Application

Author :

M. Franta;A. Rosova;M. Tapajna;E. Dobrocka;K. Frohlich

Author_Institution :

Institute of Electrical Engineering, Centre of Excellence CENG, SAS, D?bravsk? cesta 9, 841 04 Bratislava, Slovak Republic

fYear :

2006

Firstpage :

Lastpage :

Abstract :

We analyzed microstructure of as-deposited and rapid thermal annealed HfO₂ and Hf_xSi_1-xO_y dielectric films with Ru gate electrode. As-deposited films exhibited dielectric constant 12 and 20 for Hf_xSi_1-xO_y and HfO₂, respectively. TEM and grazing incidence XRD revealed that as-deposited HfO₂ films have polycrystalline character, while Hf_xSi_1-xO_y films are amorphous. Rapid thermal annealing makes favourable growth of monoclinic HfO₂ phase in HfO₂ films and tetragonal or orthorhombic phase in Hf_xSi_1-xO_y films

Keywords :

"Microstructure","Hafnium oxide","Dielectric films","Electrodes","Semiconductor films","Rapid thermal annealing","Dielectric constant","Thermal stability","Voltage","Capacitance-voltage characteristics"

Publisher :

ieee

Conference_Titel :

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on

Print_ISBN :

1-4244-0369-0

Type :

conf

DOI :

10.1109/ASDAM.2006.331150

Filename :

4133074

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3624481