DocumentCode :
3624483
Title :
Influence of mechanical strain on essential characteristics of GMR structures
Author :
V. Ac;B. Anwarzai;S. Luby;E. Majkova
Author_Institution :
A. Dub?ek University of Tren??n, ?tudentsk? 1, 91151 Tren??n, Slovak Republic. e-mail: vac@tnuni.sk
fYear :
2006
Firstpage :
79
Lastpage :
82
Abstract :
Giant magnetoresistance (GMR) of Co and Fe-Co based structures with Cu and Au spacers were e-beam evaporated onto Si wafers. The thickness of layers was obtained from the simulation of X-ray reflectivity spectra. The GMR ratio was between 3.3 and 5.6 %. The effect of strain upon samples was studied in a bending configuration. The different dependences of coercivity (Hc) vs. strain were found. For example, for sample with Co(5)/Au(2.2)/Co(2) core structure (where numbers denote thickness in nm) Hc increases with increasing compressive stress, whereas for sample with Co(0.5)/Cu(3)/Co(5) core structure it increases with tensile stress. The relative change of GMR ratio vs. loading in the strain interval plusmn 280times10-6 is 1-2 % near to the point of inflection of GMR vs. H curve (3.6 kA/m) for the second sample. The structures can be further optimized and applied in sensors of mechanical quantities
Keywords :
"Capacitive sensors","Giant magnetoresistance","Magnetic field induced strain","Magnetostriction","Magnetic sensors","Magnetic separation","Tensile stress","Mechanical sensors","Magnetic field measurement","Strips"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331158
Filename :
4133082
Link To Document :
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