Title :
Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
Author :
M. Marso;A. Fox;G. Heidelberger;P. Kordos;H. Luth
Author_Institution :
Institute of Bio- and Nanosystems (IBN-1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre J?lich, D-52425 J?lich, Germany. e-mail: m.marso@fz-juelich.de
Abstract :
In this comparative study we investigate the performance of AlGaN/GaN based MSM varactor diodes based on HFET and MOSHFET layer systems. Device fabrication uses standard HFET fabrication technology, allowing easy integration in MMICs. Devices with different electrode geometries are characterized by DC and by S-parameter measurements up to 50 GHz. The HFET based varactors show capacitance ratios up to 14. The MOSHFET based devices, on the other hand, exhibit lower capacitance ratios and poorer stability because of the insulation layer between electrodes and semiconductor
Keywords :
"Aluminum gallium nitride","Gallium nitride","Varactors","HEMTs","MODFETs","MOSHFETs","Semiconductor diodes","Fabrication","Electrodes","Capacitance"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331195
