• DocumentCode
    3624500
  • Title

    Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures

  • Author

    M. Marso;A. Fox;G. Heidelberger;P. Kordos;H. Luth

  • Author_Institution
    Institute of Bio- and Nanosystems (IBN-1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre J?lich, D-52425 J?lich, Germany. e-mail: m.marso@fz-juelich.de
  • fYear
    2006
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    In this comparative study we investigate the performance of AlGaN/GaN based MSM varactor diodes based on HFET and MOSHFET layer systems. Device fabrication uses standard HFET fabrication technology, allowing easy integration in MMICs. Devices with different electrode geometries are characterized by DC and by S-parameter measurements up to 50 GHz. The HFET based varactors show capacitance ratios up to 14. The MOSHFET based devices, on the other hand, exhibit lower capacitance ratios and poorer stability because of the insulation layer between electrodes and semiconductor
  • Keywords
    "Aluminum gallium nitride","Gallium nitride","Varactors","HEMTs","MODFETs","MOSHFETs","Semiconductor diodes","Fabrication","Electrodes","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331195
  • Filename
    4133119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624500