Title :
2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructure
Author :
J. Martaus;V. Cambel;R. Kudela;D. Gregusova;J. Soltys
Author_Institution :
Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovak Republic. e-mail: elekmajo@savba.sk
Abstract :
We have studied transport of a two-dimensional electron gas through a potential barrier prepared on shallow GaAs/AlxGa 1-xAs/InGaP heterostructure by local anodic oxidation (LAO) with an AFM tip. The potential barrier height after LAO was 55 meV, and it increased to 270 meV after oxide line removal at 300 mV, at room temperature. Barriers with this height can be used for room temperature nanometre-sized structures and devices fabrication
Keywords :
"Electrons","Gallium arsenide","Oxidation","Temperature","Nanostructures","Nanoscale devices","Atomic force microscopy","Voltage","Molecular beam epitaxial growth","Bars"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331201
