• DocumentCode
    3624662
  • Title

    Bias-Dependent Model of Microwave FET S-parameters Based on Prior Knowledge ANNs

  • Author

    Zlatica D. Marinkovic;Olivera R. Pronic;Vera V. Markovic

  • Author_Institution
    Student Member, IEEE, Faculty of Electronic Engineering, University of Ni?, Aleksandra Medvedeva 14, 18000 Ni?, Serbia, phone +381-18-529-303
  • fYear
    2006
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    The applications of artificial neural networks (ANNs) in bias-dependent modeling of S-parameters of microwave FETs have been proposed earlier. Here, a model based on an ANN with additional prior knowledge at its inputs (PKI ANN) is introduced. S-parameters of the device that belongs to the same class as the modeled device are used as the prior knowledge. The PKI concept allows ANN model to be developed with less training data, which is very advantageous when training data is expensive or time consuming to obtain. The proposed modeling concept is illustrated by an appropriate modeling example
  • Keywords
    "Microwave FETs","Scattering parameters","Artificial neural networks","Microwave devices","HEMTs","Equivalent circuits","Training data","Electromagnetic modeling","MODFETs","Microwave transistors"
  • Publisher
    ieee
  • Conference_Titel
    Neural Network Applications in Electrical Engineering, 2006. NEUREL 2006. 8th Seminar on
  • Print_ISBN
    1-4244-0432-0
  • Type

    conf

  • DOI
    10.1109/NEUREL.2006.341208
  • Filename
    4147196