Title :
Leakage-Conscious Architecture-Level Power Estimation for Partitioned and Power-Gated SRAM Arrays
Author :
Minh Q. Do;Mindaugas Drazdziulis;Per Larsson-Edefors;Lars Bengtsson
Author_Institution :
Chalmers University of Technology, Sweden
fDate :
3/1/2007 12:00:00 AM
Abstract :
We propose a methodology and power models for an accurate high-level power estimation of physically partitioned and power-gated SRAM arrays. The models offer accurate estimation of both dynamic and leakage power, including the power dissipation due to emerging leakage mechanisms such as gate oxide tunneling, for partitioned arrays that deploy data-retaining sleep techniques for leakage reduction. Using the proposed methodology, dynamic, leakage and total power of partitioned SRAM arrays can be estimated with a 97% accuracy in comparison to the power obtained by running full circuit-level simulations
Keywords :
"Random access memory","Power dissipation","Tunneling","Circuit simulation","Gate leakage","Decoding","Computer science","Power engineering and energy","Circuit synthesis","Libraries"
Conference_Titel :
Quality Electronic Design, 2007. ISQED ´07. 8th International Symposium on
Print_ISBN :
0-7695-2795-7
DOI :
10.1109/ISQED.2007.97