DocumentCode :
3624910
Title :
Reliability of memory technologies
fYear :
1971
fDate :
3/1/1971 12:00:00 AM
Firstpage :
67
Lastpage :
68
Abstract :
The subject of the session as put to the panel and audience by Will Kauffman, was a comparison of the various competing memory technologies with respect to: 1. Reliability; 2. Performance; and 3. Cost These considerations were discussed not only by panel members representing the suppliers of the memory circuits but also by the users, in this case Honeywell Information Systems and IBM Among the subjects discussed were: 1. the accepted failure rate for memories; 2. the number of interconnects for the various technologies and its effect on reliability; 3. the competitive nature of bipolar memories compared to MOS.
Keywords :
"Costs","Integrated circuit interconnections","Semiconductor device reliability","Amorphous materials","Information systems","Soldering","Bonding","Magnetic cores","Energy conversion","Military communication"
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1971. 9th Annual
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1971.362494
Filename :
4207863
Link To Document :
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