AP-MOVPE growth and characterization of GaAs1-xNx epilayers

Nitrogen incorporation into GaAs epilayers has received interest especially due to band gap decreasing of resultant material. Small fraction of nitrogen makes GaAs_1-xN_x useful material for optoelectronic devices grown on GaAs substrates. However, achieving high quality of GaAs_1-xN_x/GaAs heterostructures requires MBE (Molecular Beam Epitaxy) or LP-MOVPE (low pressure-metalorganic vapour phase epitaxy) technique. In this article the technological parameters and characterization of epilayers with small nitrogen content obtained by AP-MOVPE are presented. Under our growth conditions we achieve GaAs_1-xN_x/GaAs heterostructures which can be used for photodetector applications. We have focused our research on optical, electrical and structural properties of these material.