DocumentCode :
3625346
Title :
Power Analysis Resistant SRAM
Author :
Engin Konur;Yaman Ozelci;Ebru Arikan;Umut Eksi
Author_Institution :
T?B?TAK-UEKAE, TURKEY, engin@uekae.tubitak.gov.tr
fYear :
2006
fDate :
7/1/2006 12:00:00 AM
Firstpage :
1
Lastpage :
6
Abstract :
The power consumption of a standard CMOS SRAM during read/write operations is dependent on the address applied, the data accessed, and the type of access (read/write). The power analysis resistant SRAM structure presented in this work reduces the dependency of power consumption on data and address 10 times compared to standard SRAM at the expense of higher power and silicon area consumption. Modifications on the primitive SRAM cell, address decoding logic and write operation were made to reduce the dependency.
Keywords :
"Random access memory","Logic","Energy consumption","Cryptography","Decoding","Hardware","Read-write memory","Clocks","Charge transfer","Automation"
Publisher :
ieee
Conference_Titel :
Automation Congress, 2006. WAC ´06. World
ISSN :
2154-4824
Print_ISBN :
1-889335-33-9
Type :
conf
DOI :
10.1109/WAC.2006.375932
Filename :
4259848
Link To Document :
بازگشت