DocumentCode
3625346
Title
Power Analysis Resistant SRAM
Author
Engin Konur;Yaman Ozelci;Ebru Arikan;Umut Eksi
Author_Institution
T?B?TAK-UEKAE, TURKEY, engin@uekae.tubitak.gov.tr
fYear
2006
fDate
7/1/2006 12:00:00 AM
Firstpage
1
Lastpage
6
Abstract
The power consumption of a standard CMOS SRAM during read/write operations is dependent on the address applied, the data accessed, and the type of access (read/write). The power analysis resistant SRAM structure presented in this work reduces the dependency of power consumption on data and address 10 times compared to standard SRAM at the expense of higher power and silicon area consumption. Modifications on the primitive SRAM cell, address decoding logic and write operation were made to reduce the dependency.
Keywords
"Random access memory","Logic","Energy consumption","Cryptography","Decoding","Hardware","Read-write memory","Clocks","Charge transfer","Automation"
Publisher
ieee
Conference_Titel
Automation Congress, 2006. WAC ´06. World
ISSN
2154-4824
Print_ISBN
1-889335-33-9
Type
conf
DOI
10.1109/WAC.2006.375932
Filename
4259848
Link To Document