• DocumentCode
    3625346
  • Title

    Power Analysis Resistant SRAM

  • Author

    Engin Konur;Yaman Ozelci;Ebru Arikan;Umut Eksi

  • Author_Institution
    T?B?TAK-UEKAE, TURKEY, engin@uekae.tubitak.gov.tr
  • fYear
    2006
  • fDate
    7/1/2006 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The power consumption of a standard CMOS SRAM during read/write operations is dependent on the address applied, the data accessed, and the type of access (read/write). The power analysis resistant SRAM structure presented in this work reduces the dependency of power consumption on data and address 10 times compared to standard SRAM at the expense of higher power and silicon area consumption. Modifications on the primitive SRAM cell, address decoding logic and write operation were made to reduce the dependency.
  • Keywords
    "Random access memory","Logic","Energy consumption","Cryptography","Decoding","Hardware","Read-write memory","Clocks","Charge transfer","Automation"
  • Publisher
    ieee
  • Conference_Titel
    Automation Congress, 2006. WAC ´06. World
  • ISSN
    2154-4824
  • Print_ISBN
    1-889335-33-9
  • Type

    conf

  • DOI
    10.1109/WAC.2006.375932
  • Filename
    4259848