DocumentCode :
3625626
Title :
Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques
Author :
Josef Dobes;Martin Grabner;Lubomir Hruskovic
Author_Institution :
Dept. of Radio Electronics, Czech Technical University in Prague, Technick? 2, 166 27 Praha 6, Czech Republic. E-Mail: dobes@feld.cvut.cz
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
603
Lastpage :
608
Abstract :
The optimization is an indispensable tool for extracting the parameters of any complicated models. Hence, advanced optimization techniques are also necessary for identifying the model parameters of semiconductor devices because their current models are very sophisticated (especially the BJT and MOSFET ones). The equations of such models contain typically one hundred parameters. Therefore, the measurement and particularly identification of the full set of the model parameters is very difficult. In the paper, an optimization method is presented which is applicable for the identifications of very complicated models using a relatively small number of iterations. The algorithm has been implemented into the original software tool C.I.A. (circuit interactive analyzer) to its static and dynamic analysis modes. Therefore, the optimization is able to identify both direct-current and capacitance models of semiconductor devices. The process is demonstrated with various transistors.
Keywords :
"Semiconductor devices","Algorithm design and analysis","MOSFET circuits","Equations","Particle measurements","Optimization methods","Software algorithms","Software tools","Circuit analysis","Capacitance"
Publisher :
ieee
Conference_Titel :
Information Technology Interfaces, 2007. ITI 2007. 29th International Conference on
ISSN :
1330-1012
Print_ISBN :
953-7138-09-7
Type :
conf
DOI :
10.1109/ITI.2007.4283840
Filename :
4283840
Link To Document :
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