Title :
New Punch-through Assisted Hot Holes Programming Mechanism for Reliable SONOS FLASH Memories with Thick Tunnel Oxide
Author :
N. Akil;M. van Duuren;D.S. Golubovic;M. Boutchich;R. van Schaijk
Author_Institution :
NXP Semiconductors, Research, Kapeldreef 75, B-3001 Leuven, Belgium, e-mail: nader.akil@nxp.com
Abstract :
This article reports a new, low voltage (VCG=-6V, VDS=5V) and medium power punch-through assisted hot holes (PAHH) programming mechanism for thick tunnel oxide SONOS. The mechanism is meant for short CG lengths and yields good memory characteristics: 5.5V VT window (symmetric around 0V), 100mus programming time, endurance of 10k cycles, excellent immunity to disturbs, and good memory retention. The presented operation scheme is suitable for reliable embedded SONOS flash memories in sub-100 nm CMOS generations.
Keywords :
"Hot carriers","SONOS devices","Flash memory","Character generation","Tunneling","Electrons","Low voltage","Charge carrier processes","Acceleration","Power generation"
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Print_ISBN :
1-4244-0752-4
Electronic_ISBN :
2159-4864
DOI :
10.1109/NVSMW.2007.4290595
