DocumentCode :
3626213
Title :
SiGe HBT Wideband Amplifier for Millimetre Wave Applications
Author :
M. Krcmar;N. Noether;B. Heinemann;F. Korndorfer;Jan Hoffmann;G. Boeck
Author_Institution :
Technische Universit?t Berlin, Microwave Engineering, Sekr. HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany
fYear :
2006
fDate :
5/1/2006 12:00:00 AM
Firstpage :
1047
Lastpage :
1050
Abstract :
A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author´s best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
Keywords :
"Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Broadband amplifiers","Millimeter wave technology","BiCMOS integrated circuits","Bandwidth","Integrated circuit technology","Costs","Substrates"
Publisher :
ieee
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Print_ISBN :
978-83-906662-7-3
Type :
conf
DOI :
10.1109/MIKON.2006.4345366
Filename :
4345366
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3626213
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