Influence of External Perturbations on a Real Time Plasma Control

Summary form only given. Influences of perturbers, like RF power and gas flow, on dual-radio frequency capacitive coupled discharge are reported. A control of plasma parameters is the key for plasma etching of dielectric films include ion-flux and gas-density of oxygen containing species in the plasma. The ion-flux is measured with an isolated collection area built into the electrode surface, biased to -18 Volts. Densities of chemical species are measured using mass-spectrometry technique. The response-surface of the sensors in the process-space was collected over the process space. In this paper we demonstrate real-time control of ion-electrode-flux independent of plasma chemistry in a modified Exelan chamber (Lam Research).