Title :
Modelling Power Schottky Diodes
Author :
Janusz Zarebski;Jacek Dabrowski
Author_Institution :
Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225 Gdynia, POLAND. E-mail: zarebski@am.rgdynia.pl
Abstract :
This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.
Keywords :
"Schottky diodes","Silicon carbide","Semiconductor diodes","SPICE","Isothermal processes","Electrothermal effects","Temperature","Breakdown voltage","Semiconductor process modeling","Schottky barriers"
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
Print_ISBN :
966-553-507-2
DOI :
10.1109/TCSET.2006.4404454
