DocumentCode :
3626755
Title :
ON-Resistance of Power MOSFETs
Author :
Janusz Zarebski;Rafal Zarebski
Author_Institution :
Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225 Gdynia, POLAND. E-mail: zarebski@am.gdynia.pl
fYear :
2006
Firstpage :
145
Lastpage :
147
Abstract :
This paper deals with modelling of the drain-to-source ON-Resistance (Ron) of power MOSFETs. Two kinds of the transistor structures: VDMOS and CoolMOS made of a silicon and a silicon-carbide are considered in the paper.
Keywords :
"MOSFETs","Transistors","Silicon carbide","Epitaxial layers","Doping","Electron mobility","Permittivity","Voltage","Electric resistance","Chromium"
Publisher :
ieee
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
Print_ISBN :
966-553-507-2
Type :
conf
DOI :
10.1109/TCSET.2006.4404476
Filename :
4404476
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3626755
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