Title :
Numerical Modelling Study of the Sensitivity of SOS MOSFET Characteristics to Silicon film Thickness and Back Surface Trapped Charge Variation
Author :
Karl Bertling;A. D. Rakic;Yew-Tong Yeow
Author_Institution :
School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane QLD 4072, Australia, Email: bertling@itee.uq.edu.au
Abstract :
In this paper we present a numerical study of the sensitivity of silicon-on-sapphire MOSFET characteristics to silicon film thickness and back surface trapped charge. We demonstrate that the thickness of the film and the back surface trapped charge have a significant effect on the operation of the device and in particular the reduction of the threshold voltage.
Keywords :
"Numerical models","MOSFET circuits","Semiconductor films","Threshold voltage","Electron traps","Silicon on insulator technology","Information technology","Australia","Leakage current","Semiconductor thin films"
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Print_ISBN :
978-1-4244-0577-0
Electronic_ISBN :
2377-5505
DOI :
10.1109/COMMAD.2006.4429937
