• DocumentCode
    3627049
  • Title

    Numerical Modelling Study of the Sensitivity of SOS MOSFET Characteristics to Silicon film Thickness and Back Surface Trapped Charge Variation

  • Author

    Karl Bertling;A. D. Rakic;Yew-Tong Yeow

  • Author_Institution
    School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane QLD 4072, Australia, Email: bertling@itee.uq.edu.au
  • fYear
    2006
  • Firstpage
    283
  • Lastpage
    285
  • Abstract
    In this paper we present a numerical study of the sensitivity of silicon-on-sapphire MOSFET characteristics to silicon film thickness and back surface trapped charge. We demonstrate that the thickness of the film and the back surface trapped charge have a significant effect on the operation of the device and in particular the reduction of the threshold voltage.
  • Keywords
    "Numerical models","MOSFET circuits","Semiconductor films","Threshold voltage","Electron traps","Silicon on insulator technology","Information technology","Australia","Leakage current","Semiconductor thin films"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-0577-0
  • Electronic_ISBN
    2377-5505
  • Type

    conf

  • DOI
    10.1109/COMMAD.2006.4429937
  • Filename
    4429937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3627049