Title :
A novel monolithic pixel detector implemented in high-voltage CMOS technology
Author_Institution :
Institute for Computer Science, University of Mannheim, Germany
Abstract :
Novel concept for monolithic pixelated particle detector with 100 % fill-factor will be presented. The detection is based on the charge drift in the depleted zone of the reverse biased diode. Pixel electronics, which includes amplifier, discriminator, threshold-tune DAC and a digital storage cell, is placed inside the cathode of the sensor (N-well). Two test chips with different pixel matrices and test structures have been fabricated in a 0.35 mum high-voltage CMOS process. The results of the electrical tests and measurements with radioactive sources will be presented.
Keywords :
"CMOS technology","Detectors","Testing","Signal generators","Diodes","CMOS process","MOSFETs","Electrodes","Logic","Circuits"
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS ´07. IEEE
Print_ISBN :
978-1-4244-0922-8
DOI :
10.1109/NSSMIC.2007.4437188
