DocumentCode :
3627377
Title :
Y-Junction-Coupled S-Section InAs/InGaAs/GaAs Quantum-Dot Ring Lasers with High Unidirectionality
Author :
Nathan Withers;Hongjun Cao;Gennady A. Smolyakov;Allen L. Gray;Luke F. Lester;Marek Osinski
Author_Institution :
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106-4343. nwithers@chtm.unm.edu
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum dot ring lasers with high unidirectionality is reported. The new design suppresses the unwanted counterpropagating modes more effectively than in the previous S-section-racetrack design.
Keywords :
"Indium gallium arsenide","Gallium arsenide","Quantum dots","Ring lasers","Quantum dot lasers","Waveguide lasers","Optical design","Quantum well lasers","Laser modes","Semiconductor lasers"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Electronic_ISBN :
2160-9004
Type :
conf
DOI :
10.1109/CLEO.2007.4452597
Filename :
4452597
Link To Document :
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