DocumentCode :
3627925
Title :
Innovative High Voltage transistors for complex HV/RF SoCs in baseline CMOS
Author :
J. Sonsky;A. Heringa;J. Perez-Gonzalez;J. Benson;P.Y. Chiang;S. Bardy;I. Volokhine
Author_Institution :
NXP-TSMC Research Center, Kapeldreef 75, Leuven, Belgium. jan.sonsky@nxp.com
fYear :
2008
Firstpage :
115
Lastpage :
116
Abstract :
Trends in portable applications lead to integration of power management, power amplification and RF functionality in a single chip using the most advanced CMOS technology. The required HV transistors should be strictly realized in baseline CMOS to guarantee cost competitiveness and short time-to-market. This paper advocates innovative transistor architectures based on smart layout to address this challenge in both bulk and PD-SOI sub-100 nm CMOS.
Keywords :
"Voltage","Radio frequency","CMOS technology","MOSFETs","Transistors","Fingers","CMOS process","Space technology","Energy management","Costs"
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
ISSN :
1524-766X
Print_ISBN :
978-1-4244-1614-1
Type :
conf
DOI :
10.1109/VTSA.2008.4530823
Filename :
4530823
Link To Document :
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