DocumentCode
3627970
Title
Design and Optimization of 20 GHz LC-VCOs in SiGe:C BiCMOS Technology
Author
Jacques Verdier;Jose Cruz Nunez Perez;Christian Gontrand
Author_Institution
Inst. des Nanotechnol. de Lyon, Villeurbanne
fYear
2008
Firstpage
648
Lastpage
652
Abstract
The design and analysis of fully integrated voltage controlled oscillators (VCO) for 20 GHz low cost and low power communication system is presented in this paper. Two differential topologies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focussed on oscillation frequency, tuning range, phase noise, and output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of fT=55 GHz have been used and produced with a monolithic BiCMOS technology.
Keywords
"Design optimization","BiCMOS integrated circuits","Voltage-controlled oscillators","Costs","Topology","Frequency","Tuning","Phase noise","Power generation","Bipolar transistors"
Publisher
ieee
Conference_Titel
Circuits and Systems for Communications, 2008. ICCSC 2008. 4th IEEE International Conference on
Print_ISBN
978-1-4244-1707-0
Type
conf
DOI
10.1109/ICCSC.2008.143
Filename
4536835
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