Theory and Design Optimization of Energy-Efficient Hydrophobic Wafer-bonded III–V/Si Hybrid Semiconductor Optical Amplifiers

Author

Cheung, Stephane ; Kawakita, Y. ; Kuanping Shang ; Yoo, S.J.B.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Davis, Davis, CA, USA

Volume

31

Issue

24

fYear

2013

fDate

Dec.15, 2013

Firstpage

4057

Lastpage

4066

Abstract

This paper discusses optimum design strategies for high-efficiency hybrid semiconductor optical amplifiers (SOA). A comprehensive model is presented to determine the width, composition, and number of quantum wells for a hydrophobic bonded SOA with In s-x-y)Ga (x)Al (y) As quantum-wells (QW). Optimizing the interfacial bonding layer, III-V wafer stack design, straight hybrid amplifier dimensions and flared amplifier configurations leads to a design for up to 35% wall-plug efficiency at 2 mW input and 10 dB gain. Likewise, optimized dimensions also lead to 15% wall-plug efficiency (WPE) at 0.1 mW input and 10 dB gain. Thermal effects due to the effect of the buried oxide layer (BOX) is presented and methods of improved thermal extraction is discussed.

Keywords

semiconductor optical amplifiers; semiconductor quantum wells; buried oxide layer; design optimization; energy-efficient hydrophobic wafer; hybrid amplifier dimensions; hybrid semiconductor optical amplifiers; interfacial bonding layer; quantum wells; thermal extraction; wall-plug efficiency; Bonding; Indium phosphide; Mathematical model; Semiconductor optical amplifiers; Silicon; Strain; Data centers; integrated optical devices; optical amplifiers; optical interconnects;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2013.2284287

Filename

6617669