DocumentCode
3628292
Title
Microwave Characterization and Properties of 2μm Gate Length AlGaN/GaN HEMT Structures
Author
Martin Tomaska;Tibor Lalinsky;Gabriel Vanko;Martin Misun
Author_Institution
Dept. of Microelectronics, Slovak University of Technology, Ilkovi?ova 3, 81219 Bratislava, Slovak Republic, tomaska@elf.stuba.sk
fYear
2008
fDate
4/1/2008 12:00:00 AM
Firstpage
1
Lastpage
4
Abstract
The paper reports the properties of AlGaN/GaN HEMT fabricated on sapphire substrate. Using 2 mum length of gate electrode 6.67 GHz transition frequency as well as 24.5 GHz maximum frequency of oscillation was achieved. Small-signal model was identified. The transistor transconductance is in the range of 170 mS/mm. However the transistor was intended for structure and technology verification, it could be used in RF circuits. To improve HEMT´s microwave properties, gate length and source-drain distance shortening are in progress.
Keywords
"Aluminum gallium nitride","Gallium nitride","HEMTs","Microwave transistors","Substrates","Microwave devices","Ohmic contacts","Microwave technology","Frequency","Transconductance"
Publisher
ieee
Conference_Titel
Microwave Techniques, 2008. COMITE 2008. 14th Conference on
Print_ISBN
978-1-4244-2137-4
Type
conf
DOI
10.1109/COMITE.2008.4569952
Filename
4569952
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