• DocumentCode
    3628374
  • Title

    Non-isothermal characteristics of SiC power Schottky diodes

  • Author

    J. Zarebski;J. Dabrowski

  • Author_Institution
    Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225, (Poland)
  • fYear
    2008
  • Firstpage
    1363
  • Lastpage
    1367
  • Abstract
    In the paper the problem of modelling d.c. characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky diode.
  • Keywords
    "Schottky diodes","Temperature measurement","Silicon carbide","Voltage measurement","Current measurement","Thermal resistance","Resistance"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on
  • Print_ISBN
    978-1-4244-1663-9
  • Type

    conf

  • DOI
    10.1109/SPEEDHAM.2008.4581136
  • Filename
    4581136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3628374