Title :
2-μm InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes
Author :
Nathan J. Withers; Hongjun Cao;Gennady A. Smolyakov;Ron Kaspi;Marek Osinski
Author_Institution :
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, 87106-4343 USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.
Keywords :
"Light emitting diodes","Current measurement","Metals","Molecular beam epitaxial growth","Fabrication","Optical device fabrication","Gallium"
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Electronic_ISBN :
2160-9004
DOI :
10.1109/CLEO.2006.4628797
