Special RF/microwave devices in Silicon-on-Glass Technology

Author

L. K. Nanver;H. Schellevis;T. L. M. Scholtes;L. La Spina;G. Lorito;F. Sarubbi;V. Gonda;M. Popadic;K. Buisman;L. C. N. de Vreede;C. Huang;S. Milosavljevic;E. J. G. Goudena

Author_Institution

Delft Institute of Microsystems and Nanoelectronics (DIMES) Delft University of Technology, Feldmannweg 17, 2628 CT, The Netherlands

fYear

2008

Firstpage

33

Lastpage

40

Abstract

This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.

Keywords

"Varactors","Silicon","Substrates","Heating","Silicon germanium","Radio frequency","Resistance"

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

2378-590X

Type

conf

DOI

10.1109/BIPOL.2008.4662707

Filename

4662707