DocumentCode :
3629479
Title :
THz detection by field effect transistors: Antenna and high magnetic field effects
Author :
J. Lusakowski;M. Sakowicz;K. Karpierz;W. Knap;M. Grynberg
Author_Institution :
Instiute of Experimental Physics, University of Warsaw, Poland
fYear :
2008
Firstpage :
1
Lastpage :
2
Abstract :
An overview is given on recent experimental results in THz detection with high electron mobility transistors. Polarization studies showed clear antenna (directional) effects in detection. Experiments in quantizing magnetic fields allowed us to clarify the role of gated and ungated parts of the channel in detection.
Keywords :
"Transistors","Logic gates","Magnetic fields","HEMTs","MODFETs","Oscillators","Magnetic field measurement"
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
ISSN :
2162-2027
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
2162-2035
Type :
conf
DOI :
10.1109/ICIMW.2008.4665605
Filename :
4665605
Link To Document :
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