• DocumentCode
    3630214
  • Title

    OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor

  • Author

    S. Hasenohrl;M. Kucera;M. Morvic;J. Novak

  • Author_Institution
    Institute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia. e-mail: Stanislav.Hasenohrl@savba.sk
  • fYear
    2008
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    A set of Ga1-xMnxAs epitaxial layers with variable Mn content xMn was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of xMn. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2?1018 cm-3. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1?1020 cm-3.
  • Keywords
    "Magnetic semiconductors","Gallium arsenide","Saturation magnetization","Manganese alloys","Magnetic materials","Electric variables measurement","Epitaxial layers","Inductors","Optical saturation","Solids"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Print_ISBN
    978-1-4244-2325-5
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743293
  • Filename
    4743293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3630214