• DocumentCode
    3630215
  • Title

    Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions

  • Author

    Zs. J. Horvath;V. Rakovics;B. Podor

  • Author_Institution
    Hungarian Academy of Sciences Research Institute for Technical Physics and Materials Science, Budapest 114, P.O. Box 49., H-1525 Hungary
  • fYear
    2008
  • Firstpage
    119
  • Lastpage
    122
  • Abstract
    Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.
  • Keywords
    "Gold","Temperature","Substrates","Schottky barriers","Ohmic contacts","Lattices","Epitaxial layers","Etching","Materials science and technology","Tellurium"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Print_ISBN
    978-1-4244-2325-5
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743295
  • Filename
    4743295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3630215