Investigation of Ti/Al ohmic contact to N-type 6H-SiC

The presented work describes behavior of contact structures of Ti/Al type on 6H-SiC N-type prepared by the sputtering technology. Optimal annealing temperature is 1065?C, minimal value of the contact resistivity is 4.89?10^-4 ?cm². The plasma cleaned substrates produce metallizations with better adhesion and frequently with better morphology. The metallizations with 60 nm thickness of Al layer are not applicable. The gradually sputtered metallizations produce ohmic contact structures with better parameters. XPS analysis shows that aluminum leaks out metallization in the vacuum annealing process at higher temperatures.