• DocumentCode
    3630243
  • Title

    InAIN/GaN MOSHEMT with Al2O3 insulating film

  • Author

    K. Cico;D. Gregusova;J. Kuzmik;M. A. di Forte-Poisson;T. Lalinsky;D. Pogany;S. L. Delage;K. Frohlich

  • Author_Institution
    Institute of Electrical Engineering, Centre of Excellence CENG, Slovak Academy of Sciences, D?bravsk? cesta 9, 841 04 Bratislava, Slovakia. e-mail: karol.cico@savba.sk
  • fYear
    2008
  • Firstpage
    87
  • Lastpage
    90
  • Abstract
    In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of the leakage current was about 7 orders of magnitude compared with HEMT structures without the insulating film.
  • Keywords
    "Gallium nitride","HEMTs","Dielectrics and electrical insulation","Rapid thermal annealing","Pulse measurements","Leakage current","Threshold voltage","Thermal stability","Temperature","MODFETs"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Print_ISBN
    978-1-4244-2325-5
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743365
  • Filename
    4743365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3630243