Performance of the SiGe HBT 8HP and 8WL technologies after high dose/fluence radiation exposure

Author

J. S. Rice;M. Ullan;G. Brooijmans;J. D. Cressler;D. Damiani;S. Diez;T. Gadfort;A. A. Grillo;R. Hackenburg;G. Hare;A. Jones;J. Kierstead;W. Kononenko;I. Mandic;F. Martinez-McKinney;J. Metcalfe;F. M. Newcomer;J. A. Parsons;S. Phillips;S. Rescia;H. F. F-W. S

Author_Institution

Santa Cruz Institute for Particle Physics, University of California Santa Cruz, USA

fYear

2008

Firstpage

2206

Lastpage

2210

Abstract

An assessment of the radiation tolerance of the latest generation IBM silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies (SiGe 8WL and SiGe 8HP) at extreme dose/fluence is reported. These BiCMOS technologies are of great interest for analog readout circuits in high energy physics detectors, especially the planned upgrade of the ATLAS detector for the upgraded Large Hadron Collider (sLHC) in Geneva, Switzerland. These third-generation, 130 nm SiGe HBTs show promise to operate at lower power than CMOS circuits provided that they can be shown to be sufficiently radiation tolerant. This study presents evidence of the radiation tolerance of these two candidate technologies with parametric measurements after irradiation up to a fluence of 10¹⁶ 1 MeV equivalent neutrons/cm² and a gamma dose of 100 Mrad (SiO2).

Keywords

"Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","CMOS technology","Detectors","BiCMOS integrated circuits","Neutrons","Strips","Argon","Laboratories"

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2008. NSS ´08. IEEE

ISSN

1082-3654

Print_ISBN

978-1-4244-2714-7

Type

conf

DOI

10.1109/NSSMIC.2008.4774790

Filename

4774790