DocumentCode
3630974
Title
(S)TEM tomography of AlAs-GaAs coaxial Nanowires
Author
Josep M. Rebled;Sonia Conesa-Boj;Jordi Arbiol;Francesca Peiro;Joan R. Morante;Matthias Heigoldt;Dance Spirkoska;Gerhard Abstreiter;Anna Fontcuberta i Morral
Author_Institution
MIND-IN2UB, Dept. Electr?nica, Universitat de Barcelona, Mart? i Franqu?s 1, 08028 Barcelona, CAT, Spain, phone:(+34) 934021695
fYear
2009
Firstpage
65
Lastpage
68
Abstract
(S) TEM tomography is used as a complementary tool to characterize AlAs-GaAs coaxial nanowires. These nanostructures have been grown on two different GaAs substrate orientations using molecular-beam epitaxy (MBE). The results show that quantum wells synthesized on nanowires grown on different substrate orientations present different morphology, which induces changes on their photoluminescence properties.
Keywords
"Tomography","Coaxial components","Nanowires","Molecular beam epitaxial growth","Image reconstruction","Substrates","Electrons","Nanostructures","Gallium arsenide","Quantum computing"
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
ISSN
2163-4971
Print_ISBN
978-1-4244-2838-0
Type
conf
DOI
10.1109/SCED.2009.4800431
Filename
4800431
Link To Document