Title :
Impurity-related photoluminescence from InGaN LED material
Author :
P.G. Eliseev;M. Osinski;B.S. Phillips; Pei-Chih Chiu;G. Mohs;B. Fluegel;H. Giessen;N. Peyghambarian
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. In this paper, we explain quantitatively the nature of the major emission band in Nichia LEDs. The experimental low-temperature (20 K) and room-temperature (RT) spectra were obtained by photoluminescence (PL). A broad impurity-related PL band, with an undulated envelope centered at 465 nm (2.67 eV), was observed at both low and room temperatures when the pump beam illuminated the active region.
Keywords :
"Photoluminescence","Light emitting diodes","Shape measurement","Temperature","Photonic integrated circuits","Gallium nitride","Chemical industry","Laser excitation","Materials science and technology","Physics"
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484618
