• DocumentCode
    3631159
  • Title

    Rare-earth based alternative gate dielectrics for future integration in MOSFETs

  • Author

    J.M.J. Lopes;E. Durgun-Ozben;M. Roeckerath;U. Littmark;R. Luptak;St. Lenk;A. Besmehn;U. Breuer;J. Schubert;S. Mantl

  • Author_Institution
    Institute for Bio- and Nanosystems (IBN1-IT), Research Center Juelich, Germany
  • fYear
    2009
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    In this contribution, results on the structural and electrical properties of high-κ REScO3 (RE = La, Gd, Tb, Sm) and LaLuO3 amorphous thin films are presented. The study reveals that these oxides are potential candidates for future integration in MOSFETs. High dielectric constants up to 30 were measured for amorphous thin films of these materials, as well as low leakage current and low interface trap densities. Very promising results for transistors processed on SOI and sSOI substrates are also shown.
  • Keywords
    "MOSFETs","Dielectric thin films","Amorphous materials","High-K gate dielectrics","Density measurement","Current measurement","Dielectric measurements","Dielectric materials","Leakage current","Dielectric substrates"
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
  • Print_ISBN
    978-1-4244-3704-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2009.4897548
  • Filename
    4897548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631159