• DocumentCode
    3631216
  • Title

    Frequency response of InP/InGaAs MSM photodetector with current transport along 2 deg

  • Author

    M. Horstmann;M. Hollfelder;J. Muttersbach;K. Schimpf;M. Marso;P. Kordos;H. Luth

  • Author_Institution
    Res. Center Julich, Inst. of Thin Film & Ion Technol., Germany
  • fYear
    1996
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    The optoelectronic properties of a novel metal-semiconductor-metal (MSM) photodetector (PD) are investigated. The MSM PD uses the same layer structure and processing procedure as needed for the fabrication of high electron mobility transistors (HEMT), offering new possibilities of the realization of monolithic integrated photoreceivers. The measured 3dB bandwidth of 16 GHz at 1.3 /spl mu/m wavelength for devices with 0.5 /spl mu/m finger-spacing and -width is, to the authors´ knowledge, the widest reported bandwidth on InGaAs MSM-PDs up to now.
  • Keywords
    "Frequency response","Indium phosphide","Indium gallium arsenide","Photodetectors","Absorption","HEMTs","Schottky barriers","Optical device fabrication","Bandwidth","Photonic band gap"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM ´96., Eighth International Conference on
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491974
  • Filename
    491974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631216