• DocumentCode
    3631217
  • Title

    Simple realization of a monolithic integrated photoreceiver for 10 Gbit/s using an InP/InGaAs heterostructure

  • Author

    M. Horstmann;M. Hollfelder;K. Schimpf;R. Lehmann;M. Marso;P. Kordos

  • Author_Institution
    Res. Centre Julich, Inst. of Thin Film & Ion Technol., Germany
  • fYear
    1996
  • Firstpage
    215
  • Lastpage
    218
  • Abstract
    A novel monolithic integrated photoreceiver for 10 Gbit/s long-wavelength optoelectronic transmission systems is presented. The photoreceiver consists of an MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. Design considerations, preparation procedure and optoelectronic properties of the photoreceiver under 1.3 /spl mu/m wavelength illumination are presented. The MSM photodetectors exhibit a 3 dB bandwidth of 16 GHz and the HEMT amplifiers have the cut-off frequency f/sub T/ of 45 GHz and f/sub max/, of 85 GHz. A bandwidth of 16 GHz can be achieved on optimized integrated photoreceivers.
  • Keywords
    "Indium phosphide","Indium gallium arsenide","HEMTs","Bandwidth","Photodetectors","Cutoff frequency","Transistors","Lighting","Diodes","Insulation"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM ´96., Eighth International Conference on
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491975
  • Filename
    491975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631217