DocumentCode :
3631224
Title :
Ex-situ and in-situ selenization of copper-indium and copper-boron thin films
Author :
R. J. Soukup;N. J. Ianno;Chad Kamler;Martin Diaz;Shuchi Sharma;James Huguenin-Love;Jiri Olejnicek;Scott A. Darveau;Christopher L. Exstrom
Author_Institution :
Department of Electrical Engineering, University of Nebraska-Lincoln, 68588-0511, USA
fYear :
2008
Firstpage :
1
Lastpage :
6
Abstract :
It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.
Keywords :
"Transistors","Photonic band gap","Copper","Spectroscopy","Photovoltaic cells","Atomic layer deposition","Sputtering","Raman scattering","X-ray diffraction","X-ray scattering"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC ´08. 33rd IEEE
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Type :
conf
DOI :
10.1109/PVSC.2008.4922546
Filename :
4922546
Link To Document :
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