Title :
Simulation of charge transport phenomena in the channel of deep submicron MOSFETs
Author :
A.C. Negoi;J. Zimmermann
Author_Institution :
Dept. of Electron. & Telecommun., Politehnic Univ. of Bucharest, Romania
Abstract :
This paper presents an approach of the charge transport phenomena simulation in the channel of a nMOSFET. The model given is based on the relaxation equations of the speed and energy of electrons. The looping phenomena on the output characteristics I/sub d/(V/sub ds/) is illustrated as a consequence of the response of the interface traps.
Keywords :
"MOSFETs","Electrons","Equations","Effective mass","Acceleration","Cutoff frequency","Kinetic energy","Lattices","Condition monitoring","Energy measurement"
Conference_Titel :
Semiconductor Conference, 1995. CAS´95 Proceedings., 1995 International
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494864
