DocumentCode :
3631305
Title :
On the morphology of porous silicon layers obtained by an electrochemical method
Author :
G. Craciun;A. Dafinei;C. Vrinceanu;E. Vasile;C. Flueraru
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
fYear :
1995
Firstpage :
331
Lastpage :
334
Abstract :
Porous silicon obtained in different electrochemical conditions was investigated by optical and Scanning Electron Microscopy (SEM). This paper includes an analysis of the SEM micrographs with evaluation of the pores´ size, thickness and the etch rate of the porous silicon layer.
Keywords :
"Morphology","Silicon","Optical microscopy","Voltage","Etching","Scanning electron microscopy","Current density","Temperature","Structural rings","Cathodes"
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS´95 Proceedings., 1995 International
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495030
Filename :
495030
Link To Document :
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