• DocumentCode
    3631305
  • Title

    On the morphology of porous silicon layers obtained by an electrochemical method

  • Author

    G. Craciun;A. Dafinei;C. Vrinceanu;E. Vasile;C. Flueraru

  • Author_Institution
    Inst. of Microtechnol., Bucharest, Romania
  • fYear
    1995
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    Porous silicon obtained in different electrochemical conditions was investigated by optical and Scanning Electron Microscopy (SEM). This paper includes an analysis of the SEM micrographs with evaluation of the pores´ size, thickness and the etch rate of the porous silicon layer.
  • Keywords
    "Morphology","Silicon","Optical microscopy","Voltage","Etching","Scanning electron microscopy","Current density","Temperature","Structural rings","Cathodes"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS´95 Proceedings., 1995 International
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.495030
  • Filename
    495030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631305