• DocumentCode
    3631436
  • Title

    Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/

  • Author

    A. Schuppen;U. Erben;A. Gruhle;H. Kibbel;H. Schumacher;U. Konig

  • Author_Institution
    Daimler-Benz AG, Ulm, Germany
  • fYear
    1995
  • Firstpage
    743
  • Lastpage
    746
  • Abstract
    Double-mesa type SiGe heterojunction bipolar transistors (HBTs) have been improved by increasing the base Gummel number and by using a thin, highly doped launcher layer between the base and the collector. In addition, the contact resistance of the base contact has been reduced. Hence, it was possible to obtain a record maximum frequency of oscillation up to 160 GHz for a 2-emitter finger HBT in common emitter configuration.
  • Keywords
    "Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Frequency","Contact resistance","Noise figure","Doping","Electron devices","Circuits","Fingers"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM ´95., International
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499325
  • Filename
    499325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631436