Title :
Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/
Author :
A. Schuppen;U. Erben;A. Gruhle;H. Kibbel;H. Schumacher;U. Konig
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Abstract :
Double-mesa type SiGe heterojunction bipolar transistors (HBTs) have been improved by increasing the base Gummel number and by using a thin, highly doped launcher layer between the base and the collector. In addition, the contact resistance of the base contact has been reduced. Hence, it was possible to obtain a record maximum frequency of oscillation up to 160 GHz for a 2-emitter finger HBT in common emitter configuration.
Keywords :
"Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Frequency","Contact resistance","Noise figure","Doping","Electron devices","Circuits","Fingers"
Conference_Titel :
Electron Devices Meeting, 1995. IEDM ´95., International
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499325
