DocumentCode
3631454
Title
Piezoelectric ZnO thin films prepared by cyclic sputtering and etching technology
Author
I. Novotny;P. Sutta;F. Mika;V. Tvarozek
Author_Institution
Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
Volume
1
fYear
1995
Firstpage
65
Abstract
A novel procedure of ion assisted deposition technology consisting of cyclic sputtering and ion etching is presented. Cross-resistivities of ZnO films deposited by that technique increased up to 10/sup 10/ /spl Omega/cm due to the formation of buffer regions in the films. These ZnO films with the piezoelectric coefficient of the order of 10/sup -12/ m/V are applicable in low-frequency microactuators.
Keywords
"Sputtering","Zinc oxide","Piezoelectric films","Sputter etching","Substrates","Conductivity","Semiconductor films","Conductive films","Argon","Voltage"
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500836
Filename
500836
Link To Document