Characterization of hot-carrier aging of a 0.35 /spl mu/m fully overlapped-LDD CMOS technology

The hot-carrier reliability of fully overlapped-LDD CMOS devices called FOND is investigated. Significant improvement in the hot-carrier resistance of FOND technology compared to standard LDD devices with the same effective channel length is completely explained by means of various experiments and modeling. The role of the LDD n/sup -/ concentration and the gate overlap in reduction of the degradation is systematically studied by numerical modeling, while a comparable gate oxide quality is found by experiments in both technologies. Compared to the LDD MOSFETs the application of the overlapped devices of the FOND type offers a wider process and reliability margin in the design of sub-/spl mu/m CMOS technologies.