Title :
Analysis of gamma-irradiation induced oxide charge and interface trap effects in power VDMOSFETs
Author :
S. Djoric-Veljkovic;V. Davidovic
Author_Institution :
Fac. of Technol., Nis Univ., Serbia
Abstract :
In this paper, effects of gamma-irradiation induced degradation of threshold voltage and gain factor in N-channel power VDMOSEFETs are analyzed. Analysis is carried out using the single-transistor mobility method of Dimitrijev and Stojadinovid (1987) and the subthreshold-midgap method of McWhorter and Winokur (1986). It is shown that gamma-irradiation induced degradation of power VDMOSFETs is due to a significant increase in oxide charge and a somewhat smaller increase of interface traps.
Keywords :
"Threshold voltage","Degradation","Electron traps","Power transistors","Lead compounds","Performance gain","Performance analysis","Geometry","Semiconductor device manufacture","Power engineering and energy"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500876
