• DocumentCode
    3631481
  • Title

    Analysis of gamma-irradiation induced oxide charge and interface trap effects in power VDMOSFETs

  • Author

    S. Djoric-Veljkovic;V. Davidovic

  • Author_Institution
    Fac. of Technol., Nis Univ., Serbia
  • Volume
    1
  • fYear
    1995
  • Firstpage
    259
  • Abstract
    In this paper, effects of gamma-irradiation induced degradation of threshold voltage and gain factor in N-channel power VDMOSEFETs are analyzed. Analysis is carried out using the single-transistor mobility method of Dimitrijev and Stojadinovid (1987) and the subthreshold-midgap method of McWhorter and Winokur (1986). It is shown that gamma-irradiation induced degradation of power VDMOSFETs is due to a significant increase in oxide charge and a somewhat smaller increase of interface traps.
  • Keywords
    "Threshold voltage","Degradation","Electron traps","Power transistors","Lead compounds","Performance gain","Performance analysis","Geometry","Semiconductor device manufacture","Power engineering and energy"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500876
  • Filename
    500876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631481