DocumentCode
3631482
Title
Pre-breakdown electron trapping in irradiated and annealed oxides
Author
B. Pesic;D. Manic;L. Zivkovic;N. Stojadinovic
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
1
fYear
1995
Firstpage
273
Abstract
This paper persents a generic analysis of electron trapping process in irradiated and postirradiation annealed oxides subjected to Fowler-Nordheim constant injection. Based on the first order trapping kinetics, parameters of intrinsic traps, as well as traps generated by stress, are extracted. Also the trapping rates immediately prior to breakdown are evaluated. It is found that annealing applied after irradiation modifies the electron trapping properties.
Keywords
"Electron traps","Annealing","Stress","Voltage","Electric breakdown","Silicon","MOS devices","Degradation","Plasma temperature","Electrodes"
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500879
Filename
500879
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