• DocumentCode
    3631482
  • Title

    Pre-breakdown electron trapping in irradiated and annealed oxides

  • Author

    B. Pesic;D. Manic;L. Zivkovic;N. Stojadinovic

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    1
  • fYear
    1995
  • Firstpage
    273
  • Abstract
    This paper persents a generic analysis of electron trapping process in irradiated and postirradiation annealed oxides subjected to Fowler-Nordheim constant injection. Based on the first order trapping kinetics, parameters of intrinsic traps, as well as traps generated by stress, are extracted. Also the trapping rates immediately prior to breakdown are evaluated. It is found that annealing applied after irradiation modifies the electron trapping properties.
  • Keywords
    "Electron traps","Annealing","Stress","Voltage","Electric breakdown","Silicon","MOS devices","Degradation","Plasma temperature","Electrodes"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500879
  • Filename
    500879