Title :
Modelling of ultrafast invertor logical circuit in BiMOS technology
Author :
R. Ramovic;R. Sasic
Author_Institution :
Fac. of Electr. Eng., Belgrade Univ., Serbia
Abstract :
A model for analyzing the performance of an invertor logic circuit, realized in monolithic BiMOS technology, is described in this paper. Based on this model the analysis of the circuit transfer characteristics has been performed for a wide range of component parameters. Some of typical results of this simulation are presented graphically, and based on the complete analysis of results, the optimal parameters of the circuit components, realizable in this technology, are found.
Keywords :
"Inverters","Bipolar transistors","Delay effects","Integrated circuit technology","MOSFETs","Equivalent circuits","Performance analysis","Circuit simulation","Logic circuits","Analytical models"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500917
