A new approach to the modeling of minority-carrier transport in silicon p/sup +/nn/sup +/ diode

This paper proposes the model for the minority-carrier transport in forward-biased silicon p/sup +/nn/sup +/ diode. The model is based on two mutually dependent first-order differential equations. Self-consistent solution of these equations results in the effective recombination velocity and excess hole concentration in nn/sup +/ region of the diode. Their validity is established for all injection levels and for a wide range of doping conditions and dimensions of the diode. A particular benefit of the proposed model lies in very efficient numerical solution which makes it negligibly expensive in terms of CPU time cost. Presented results are fully supported by comparison to that obtained by the device simulator BAMBI.